Flash memory with nano-pillar charge trap

摘要

An embodiment of the present invention includes a non-volatile storage unit comprising a first and second N-diffusion well separated by a distance of P-substrate. A first isolation layer is formed upon the first and second N-diffusion wells and the P-substrate. A nano-pillar charge trap layer is formed upon the first isolation layer and includes conductive nano-pillars interspersed between non-conducting regions. The storage unit further includes a second isolation layer formed upon the nano-pillar charge trap layer; and at least one word line formed upon the second isolation layer and above a region of nano-pillar charge trap layer. The nano-pillar charge trap layer is operative to trap charge upon application of a threshold voltage. Subsequently, the charge trap layer may be read to determine any charge stored in the non-volatile storage unit, where presence or absence of stored charge in the charge trap layer corresponds to a bit value.