| 发明名称 |
Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt |
| 摘要 |
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.
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| 申请公布号 |
US7314830(B2) |
申请公布日期 |
2008.01.01 |
| 申请号 |
US20070783187 |
申请日期 |
2007.04.06 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NISHIHARA SHINJI;IKEDA SHUJI;HASHIMOTO NAOTAKA;MOMIJI HIROSHI;ABE HIROMI;FUKADA SHINICHI;SUZUKI MASAYUKI |
| 分类号 |
H01L21/44;H01L21/285;H01L21/336;H01L21/762;H01L21/8238;H01L23/532;H01L29/45;H01L29/49;H01L29/78 |
主分类号 |
H01L21/44 |
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