| 摘要 |
An electronic device is presented; the device comprises an electrode structure located in electrical contact with a semiconducting element. The electrode structure is configured with two or more groups of regions comprising regions of a first group having first charge injection properties and regions of a second group having second charge injection properties being lower than the first charge injection properties. The regions of the second group are configured to provide barrier for injection of charge carriers from regions of the first group into the semiconductor element to thereby allow tailoring of desired electronic properties of the device. |
