| 摘要 |
A field effect transistor device includes a substrate, a substrate insulator layer arranged on the substrate, a semiconductor fin arranged on the substrate insulator layer, a source region arranged on a portion of the substrate insulator layer, a drain region arranged on a portion of the substrate insulator layer, a first insulator layer portion arranged on the source region, a second insulator layer portion arranged on the drain region, a gate stack arranged about a channel region of the semiconductor fin, and an insulator portion arranged on the gate stack, wherein the insulator portion arranged on the gate stack is disposed between the first insulator layer portion and the second insulator layer portion. |
