VERTICAL LIGHT EMITTING DIODE WITH CURRENT BARRIER FUNCTION AND MANUFACTURING METHOD THEREOF

摘要

A vertical light emitting diode with a current barrier function and the manufacturing method thereof are provided. By using the characteristic of the anisotropic conducting material (320) which is matched with a concave-convex conducting substrate (200), a bonding layer which is conductive vertically and is insulating transversely is formed between the concave-convex substrate (200) and a light emitting epitaxial layer (101,102,103) by using the anisotropic conducting material (320). Accordingly the vertical light emitting diode with the current blocking function is formed.