发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which controls a tapered shape of an inlet port of a via hole.SOLUTION: A semiconductor device manufacturing method comprises: forming an insulator layer 20 on a conductive layer 18 on a substrate; forming a via hole 22 which pierces the insulator layer 20; forming a resist 32 in the via hole 22; forming a mask 33 on the insulator layer 20 and the on the resist 32; forming a resist 34 on the mask 33; patterning an opening for forming a wiring groove in the resist 34, that is, patterning the resist 34 so as to form a correction pattern 34a near a position right above the via hole 22; etching the mask 33 by using the resist 34 as a mask; etching the insulator layer 20 by using the mask 33 as a mask halfway down a depth to form a wiring groove; removing the resist 32 in the via hole 22; and embedding a conductor in the via hole 22 and in the wiring groove to form embedded wiring connected to the conductive layer 18.
申请公布号 JP2014056991(A) 申请公布日期 2014.03.27
申请号 JP20120201918 申请日期 2012.09.13
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 IKETA MITSUAKI;MITANI JUNICHI;AWAYA TOMOHARU
分类号 H01L21/3205;H01L21/768 主分类号 H01L21/3205
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