发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which controls a tapered shape of an inlet port of a via hole.SOLUTION: A semiconductor device manufacturing method comprises: forming an insulator layer 20 on a conductive layer 18 on a substrate; forming a via hole 22 which pierces the insulator layer 20; forming a resist 32 in the via hole 22; forming a mask 33 on the insulator layer 20 and the on the resist 32; forming a resist 34 on the mask 33; patterning an opening for forming a wiring groove in the resist 34, that is, patterning the resist 34 so as to form a correction pattern 34a near a position right above the via hole 22; etching the mask 33 by using the resist 34 as a mask; etching the insulator layer 20 by using the mask 33 as a mask halfway down a depth to form a wiring groove; removing the resist 32 in the via hole 22; and embedding a conductor in the via hole 22 and in the wiring groove to form embedded wiring connected to the conductive layer 18. |
申请公布号 |
JP2014056991(A) |
申请公布日期 |
2014.03.27 |
申请号 |
JP20120201918 |
申请日期 |
2012.09.13 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
IKETA MITSUAKI;MITANI JUNICHI;AWAYA TOMOHARU |
分类号 |
H01L21/3205;H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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