| 摘要 |
A power semiconductor device includes first to fifth electrodes, first to sixth semiconductor layers, and several first pillar layers. The first semiconductor layer is formed on the first electrode. The second semiconductor layer is formed on the first semiconductor layer. Several first pillar layers are arranged parallel with the second semiconductor layer. The third and fourth semiconductor layers are formed on the second semiconductor layer. The fourth electrode is formed on the first pillar layer adjacent to the third semiconductor layer. The fifth electrode is formed on the first pillar layer adjacent to the fourth semiconductor layer. The concentration of dopant of the first pillar layer positioning between the first pillar layer under the fourth electrode and the first pillar layer under the fifth electrode is lower than the concentration of dopant of the first pillar layer under the fourth electrode and the first pillar layer under the fifth electrode. |
