发明名称 DEPOSITION OF METAL FILMS BASED UPON COMPLEMENTARY REACTIONS
摘要 A method comprises contacting a compound having formulae (1) with a compound having formula MLo to form a metal: [M(SiR3)m(L1)p]n (1) wherein M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal; R are each independently H, C1-C6 alkyl or -Si(R")3; R" are each independently H or C1-C6 alkyl; m is an integer from 1 to 3; n is a number representing the formation of aggregates or polymeric material; L1 is a neutral donor ligand; L is a ligand; p is an integer from 0 to 6; and o is an integer representing the number of ligands bonded to MLo.
申请公布号 WO2014047544(A1) 申请公布日期 2014.03.27
申请号 WO2013US61153 申请日期 2013.09.23
申请人 WAYNE STATE UNIVERSITY 发明人 WINTER, CHARLES, H.
分类号 C23C16/00;C23C16/448 主分类号 C23C16/00
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