| 摘要 |
A nonvolatile semiconductor memory device with a first region including a memory cell array of a plurality of memory cells arrayed in three dimensions and a second region with a peripheral circuit for controlling the memory cell array is described. The peripheral circuit includes an insulating film and a template region. The template region has a length and a width and the insulating film is spaced from (does not overlap) the edges of the template region and is arranged in the template region so that a coverage ratio of the template region is at least above a minimum coverage ratio of 30-50%. Satisfying the minimum coverage ratio allows the device layers above the second region to be formed with sufficient flatness to allow the memory device to be functional. |
