| 摘要 |
Provided is a switching element capable of effectively preventing a collapse phenomenon. A switching element (la) includes an electron running layer (12), an electron supplying layer (13) formed on an upper surface of the electron running layer (12), having a band gap larger than that of the electron running layer (12), and forming a heterojunction with the electron running layer (12), a recombination layer (17) formed on an upper surface of the electron supplying layer (13) and having a band gap smaller than that of the electron supplying layer (13), a source electrode (14) and a drain electrode (15) at least partially formed on the upper surface of the electron running layer (12), and a gate electrode (16) at least partially formed on the upper surface of the electron supplying layer (13) and arranged between the source electrode (14) and the drain electrode (15). When the switching element (la) is in an off state, electrons and holes are recombined in the recombination layer (17). |
