| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory device that allows stably holding charges in memory cells and improving operating speed, and to provide a method of manufacturing the same.SOLUTION: A non-volatile memory device includes memory cells each having a semiconductor layer, a charge storage layer provided on the semiconductor layer, and a first insulating film insulating between the semiconductor layer and the charge storage layer. The non-volatile memory device further includes a first conductive layer provided on the charge storage layer and controlling charges in the charge storage layer, a second conductive layer provided between the charge storage layer and the first conductive layer, a second insulating film insulating between the charge storage layer and the second conductive layer, and a third insulating film insulating between the first conductive layer and the second conductive layer. |
