发明名称 NANOIMPRINTING MASTER TEMPLATE AND METHOD FOR MAKING
摘要 A method for making a nanoimprinting master template uses a metallic etch stop layer for two etching steps. A layer of silicon dioxide is deposited on the etch stop layer and a first resist pattern of either concentric rings or radial spokes is formed on the silicon dioxide layer. The exposed silicon dioxide layer is etched down to the etch stop layer and the resist removed to expose a pattern of silicon dioxide rings or spokes on the etch stop layer. A second resist pattern of rings (if spokes were the first pattern) or spokes (if rings were the first pattern) is formed over the silicon dioxide rings or spokes and the etch stop layer. The exposed silicon dioxide is etched down to the etch stop layer and the resist removed to expose a pattern of silicon dioxide pillars on the etch stop layer.
申请公布号 US2014087016(A1) 申请公布日期 2014.03.27
申请号 US201213627492 申请日期 2012.09.26
申请人 HGST NETHERLANDS B.V. 发明人 GAO HE;LILLE JEFFREY S.
分类号 G11B5/84;B44C1/22 主分类号 G11B5/84
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