| 摘要 |
<p>The present invention relates to a magnetic memory element which can induce a flux reversal in a perpendicularly anisotropic free magnetic layer by applying an in-plane current to a wire adjacent thereto, while at the same time selectively reversing the flux of the free magnetic layer in each particular cell by selectively applying a voltage to each magnetic terminal junction, and as such, because spin Hall effect spin-torque, which gives rise to a flux reversal, occurs in the interfacial surface between the wire and the free magnetic layer, the magnetic memory element according to the present invention allows having a highly integrated element due to a reduced volume thereof, and thermal stability from improved perpendicular anisotropy of the free magnetic layer, and also allows reducing the critical current density due to increase in the amount of spin current. Furthermore, the memory element increases the memory reading speed, by raising the tunnel magnetic resistance with a thick insulator, while having no adverse effect on the critical current density.</p> |
