FABRICATION METHOD OF CIS THIN FILMS AND ITS APPLICATION TO CIS THIN FILM SOLAR CELLS

摘要

The present invention relates to a method for manufacturing a CIS thin film and a CIS thin film solar cell manufactured using the same. The method for manufacturing a CIS thin film according to the present invention comprises the following steps: depositing an electrode layer in the upper part of a substrate, sputtering a single target containing copper (Cu), indium (In), and selenium (Se) in the upper part of the electrode layer and depositing a light absorption layer, wherein the thickness of the CIS thin film is adjusted to manufacture the CIS thin film solar cell having structurally and optically excellent properties. Therefore, the CIS thin film can be manufactured by a single deposition process using a CIS (CuInSe2) single sputtering target, thereby simplifying processes and expecting advantageous effects in finance and efficiency.