发明名称 RELEASING CONTROL METHOD, AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent attraction caused by residual electric charge on a top layer of an electrostatic chuck.SOLUTION: A releasing control method for releasing a processed object from an electrostatic chuck 106 to which the processed object is electrostatically attracted includes: a static elimination step of performing static elimination processing by introducing an inert gas into a chamber C after the plasma processing; a high pressure step of introducing a gas of an ionization energy lower than that of helium gas after the static elimination step and maintaining a pressure within the chamber C higher than a pressure during the plasma processing or a pressure in the static elimination step; and a releasing step of releasing the processed object from the electrostatic chuck 106 by means of support pins 81 while or after the high pressure is maintained in the high pressure step.
申请公布号 JP2014056928(A) 申请公布日期 2014.03.27
申请号 JP20120200518 申请日期 2012.09.12
申请人 TOKYO ELECTRON LTD 发明人 SASAKI JUNICHI;MIYAGAWA MASAAKI
分类号 H01L21/683;B23Q3/15;H01L21/3065;H02N13/00 主分类号 H01L21/683
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