摘要 |
PROBLEM TO BE SOLVED: To inhibit the occurrence of an ashing residual.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a photoresist PR1 on an insulation film IF1 arranged on a substrate SB1; a process of dry etching the insulation film IF1 by using the photoresist PR1 as a mask and forming a fluorocarbon layer FC1 on a surface of the photoresist PR1; a process of performing an ashing treatment on the photoresist PR1 and the fluorocarbon layer FC1 to form a plurality of holes HL1 in the fluorocarbon layer FC1; and a process of removing the photoresist PR1 and the fluorocarbon layer FC1 by wet detachment. |