发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To inhibit the occurrence of an ashing residual.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a photoresist PR1 on an insulation film IF1 arranged on a substrate SB1; a process of dry etching the insulation film IF1 by using the photoresist PR1 as a mask and forming a fluorocarbon layer FC1 on a surface of the photoresist PR1; a process of performing an ashing treatment on the photoresist PR1 and the fluorocarbon layer FC1 to form a plurality of holes HL1 in the fluorocarbon layer FC1; and a process of removing the photoresist PR1 and the fluorocarbon layer FC1 by wet detachment.
申请公布号 JP2014056993(A) 申请公布日期 2014.03.27
申请号 JP20120201949 申请日期 2012.09.13
申请人 RENESAS ELECTRONICS CORP 发明人 TAKADA MASAHARU
分类号 H01L21/3065;H01L21/027 主分类号 H01L21/3065
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