发明名称 |
HIGH POWER TRANSISTOR AND FABRICATION METHOD THEREOF |
摘要 |
<p>The present specification relates to a high power transistor having a high power property without reducing a frequency property, and a fabrication method thereof. According to one embodiment of the present specification, the high power transistor includes a substrate; a first and a second epi layer which are formed on a substrate and separated from each other; a first source electrode and a first drain electrode which are formed on the first epi layer; a first gate electrode which is formed between the first source electrode and the first drain electrode; a second source electrode and a second drain electrode which is formed on the second epi layer; and a second gate electrode which is formed between the second source and the second drain electrode.</p> |
申请公布号 |
KR101378060(B1) |
申请公布日期 |
2014.03.27 |
申请号 |
KR20130134144 |
申请日期 |
2013.11.06 |
申请人 |
AGENCY FOR DEFENSE DEVELOPMENT |
发明人 |
HONG, IN PYO;LEE, BOK HYUNG;LIM, BYEONG OK;CHOI, GIL WONG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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