| 摘要 |
Disclosed is a silicon etching method for etching a silicon substrate to provide silicon trenches of different width dimensions. The method comprises: S1, providing a silicon substrate; S2, depositing a mask layer on the silicon substrate; S3, corroding the mask layer to form windows of different width dimensions, wherein at least at the bottom of a window of a non-minimum width dimension, a mask layer of a certain thickness is reserved in order to meet a condition that all the silicon trenches have the same depth after step S4; and S4, corroding the mask layer at the bottom of the window and the silicon substrate to form the silicon trenches. The mask layer of a certain thickness is reserved at the bottom of the window of the non-minimum width dimension, a large window is protected by the mask layer of the certain thickness, and a smaller window is etched first, so that the finally obtained silicon trenches have the same depth. |
