| 发明名称 |
METHOD FOR PRODUCING GALLIUM TRICHLORIDE GAS AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL |
| 摘要 |
According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas. |
| 申请公布号 |
EP2570523(A4) |
申请公布日期 |
2014.03.26 |
| 申请号 |
EP20110780659 |
申请日期 |
2011.05.11 |
| 申请人 |
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY |
发明人 |
KOUKITU, AKINORI;KUMAGAI, YOSHINAO |
| 分类号 |
C30B29/38;C01G15/00;C23C16/34;C30B25/14;C30B35/00;H01L21/205 |
主分类号 |
C30B29/38 |
| 代理机构 |
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