发明名称 |
ETCHING COMPOSITION AND METHOD FOR ETCHING A SEMICONDUCTOR WAFER |
摘要 |
<p>An etching composition for a semiconductor wafer is provided, including 0.5-50wt% base, 10-80wt% alcohol, 0.01-15wt% additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200°C, the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and only a single surface of the semiconductor wafer is etched.</p> |
申请公布号 |
EP2711989(A1) |
申请公布日期 |
2014.03.26 |
申请号 |
EP20130156375 |
申请日期 |
2013.02.22 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
YU, SHENG-MIN;SUN, WEN-CHING;WANG, TAI-JUI;CHEN, YI-FAN;SUN, CHIA-LIANG;CHIANG, HAO-HSIANG;LIAO, PIN-GUAN;CHIANG, CHI-FAN;LIN, TZER-SHEN |
分类号 |
H01L31/0236 |
主分类号 |
H01L31/0236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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