发明名称 Omega shaped nanowire field effect transistors
摘要 A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region.
申请公布号 US8680589(B2) 申请公布日期 2014.03.25
申请号 US201213372719 申请日期 2012.02.14
申请人 BANGSARUNTIP SARUNYA;CHANG JOSEPHINE B.;COHEN GUY M.;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BANGSARUNTIP SARUNYA;CHANG JOSEPHINE B.;COHEN GUY M.;SLEIGHT JEFFREY W.
分类号 H01L21/02 主分类号 H01L21/02
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