发明名称 SEMICONDUCTOR PROCESSING SYSTEM HAVING MULTIPLE DECOUPLED PLASMA SOURCES
摘要 A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.
申请公布号 KR20140036224(A) 申请公布日期 2014.03.25
申请号 KR20137032848 申请日期 2012.05.07
申请人 LAM RESEARCH CORPORATION 发明人 HOLLAND JOHN PATRICK;VENTZEK PETER L. G.;SINGH HARMEET;GOTTSCHO RICHARD
分类号 H01L21/3065 主分类号 H01L21/3065
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