发明名称 |
SEMICONDUCTOR PROCESSING SYSTEM HAVING MULTIPLE DECOUPLED PLASMA SOURCES |
摘要 |
A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled. |
申请公布号 |
KR20140036224(A) |
申请公布日期 |
2014.03.25 |
申请号 |
KR20137032848 |
申请日期 |
2012.05.07 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HOLLAND JOHN PATRICK;VENTZEK PETER L. G.;SINGH HARMEET;GOTTSCHO RICHARD |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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