INSULATING LAYER FORMING METHOD USING ICVD PROCESS

摘要

The present invention relates to a method for forming a dielectric layer using iCVD process. According to the present invention, the method for forming a dielectric layer on an organic thin film transistor using iCVD process comprises the steps of: thermally decomposing an initiator by the heat injected on the organic thin film transistor to form free radicals; activating monomers by using the free radicals to chain polymerize the monomers to form a polymer; and depositing the polymer on the organic thin film transistor to form a polymer dielectric layer. According to the present invention, it is possible to solve a shortcoming of a narrow width of a dielectric layer prepared by PECVD or CVD process through iCVD, and conduct uniform deposition compared with a conventional process, and a very low leakage current is shown in various thickness, thereby obtaining the remarkable electrical properties of a device and improving the manufacturing yield of the device, through a high dielectric constant. In addition, it is possible to prevent damage to a deposition medium due to a solvent since a desired polymer dielectric layer can be deposited with monomers and an initiator in a vapor phase condition without a solvent, particularly, an organic solvent. [Reference numerals] (S200) Supply monomers and an initiator; (S210) Inject heat; (S220) Form free radicals; (S230) Form a polymer; (S240) Form a polymeric dielectric layer