带状隙经设计之金属氧化物半导体（ＭＯＳ）闸控功率电晶体,申请号TW094135170-传众专利搜索

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发明名称	带状隙经设计之金属氧化物半导体（ＭＯＳ）闸控功率电晶体
摘要
申请公布号	TWI431771	申请公布日期	2014.03.21
申请号	TW094135170	申请日期	2005.10.07
申请人	快捷半导体公司美国	发明人	多利　盖瑞;黄麒;何易书
分类号	H01L29/78;H01L21/336;H01L21/331	主分类号	H01L29/78
代理机构		代理人	恽轶群台北市松山区南京东路3段248号7楼;陈文郎台北市松山区南京东路3段248号7楼
主权项
地址	美国

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