发明名称 SPUTTERING TARGET MATERIAL FOR HEAT SINK LAYER FORMATION OF HEAT-ASSISTED MAGNETIC RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target material for forming a heat sink layer of a heat-assisted magnetic recording medium with a sputtering method, which demands a high thermal conductivity and a smooth surface.SOLUTION: This invention is a sputtering target material for a heat sink layer formation of a heat-assisted magnetic recording medium. In the sputtering target material, a compositional formula in an atom ratio is represented by Cu-Zr-Cr, 0.10≤x≤5.00, 0.10≤y≤1.00, and the remainder is made of inevitable impurities.
申请公布号 JP2014053065(A) 申请公布日期 2014.03.20
申请号 JP20130011761 申请日期 2013.01.25
申请人 HITACHI METALS LTD 发明人 YAKABE HIDETAKA;SAITO KAZUYA;FUKUOKA ATSUSHI
分类号 G11B5/84;G11B5/738 主分类号 G11B5/84
代理机构 代理人
主权项
地址