发明名称 |
STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE |
摘要 |
A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line. |
申请公布号 |
US2014078818(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201213684784 |
申请日期 |
2012.11.26 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
CHUANG CHING-TE;YANG HAO-I;LU CHIEN-YU;CHEN CHIEN-HEN;CHANG CHI-SHIN;HUANG PO-TSANG;LAI SHU-LIN;HWANG WEI;JOU SHYH-JYE;TU MING-HSIEN |
分类号 |
G11C7/02;G11C11/00 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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