Appts. for growing crystalline semiconductor rods by Czochralski

摘要

Appts. for growing crystalline semiconductor rods using the Czochralski crystal drawing method comprises a crucible (1) specific in comparison to the crystal being grown (6) and contg. a melt (4), a reflector (8) located over the melt, a high frequency inductor (3) providing the necessary melt heat, and a seed crystal (5) rotating relative to the crucible. The appts. is novel in that the crucible is very flat and is formed of electrically insulating material, the inner wall of the crucible being at least partly covered with a layer (2) of the same compsn. as that of the melt and the outer wall being completely surrounded by a high frequency inductor. Also claimed is a method for growing crystalline semiconductor rods using the Czochralski crystal drawing method comprising directing producing the melt with a high frequency inductor surrounding a crucible. The method is novel in that the material in the crucible is first superheated so that the melt completely fills the crucible, and then the heat supply is turned down to solidify a solid layer of the same compsn. as the melt dependent on the shape of the high frequency inductor at least partly on the inner wall of the crucible, and then the seed crystal is dipped in the melt and slowly drawn upwards.