发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve a signal transmission speed.SOLUTION: An integrated circuit device which includes, on a substrate surface, conductive patterns spaced from each other and support patterns each of which is arranged on the substrate surface between the adjacent conductive patterns among the conductive patterns and which are spaced from each other by respective gap regions is provided. The adjacent conductive patterns among the conductive patterns extend from the substrate surface to above surfaces of the support patterns between the conductive patterns. A capping film is provided on the surfaces of the support patterns and surfaces of the conductive patterns. A related manufacturing method is provided. |
申请公布号 |
JP2014053612(A) |
申请公布日期 |
2014.03.20 |
申请号 |
JP20130183765 |
申请日期 |
2013.09.05 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
HAN KYU-HEE;AHN SANGHOON |
分类号 |
H01L21/768;H01L21/316;H01L21/318;H01L21/3205;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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