| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method with less variation of shapes obtained as a result of processing.SOLUTION: A plasma processing device includes: a chamber; a sample table which is arranged on a lower side of the processing chamber and on which a wafer is placed; and introduction holes which are arranged above the sample table and introduce processing gas into the processing chamber, and performs etching processing on a membrane structure arranged on an upper surface of the wafer by using plasma formed by using the processing gas. The membrane structure has a polysilicon film of a processing object on a substrate. After executing a coating process for forming plasma by supplying coating gas to the interior of the processing chamber and coating a surface of a member of the interior of the processing chamber with a membrane including Si as a component, the plasma processing device executes an etching processing process for performing etching processing on the polysilicon film on the upper surface of the wafer, and executes a metal cleaning process for forming plasma in the processing chamber and reducing metal included in the membrane before the etching processing process. |
