| 摘要 |
A semiconductor device has semiconducting layers forming a collector layer, a buffer layer, a drift layer, a base layer, and an emitter layer. The drift layer has alternating regions of n-type and p-type semiconductor material arrayed along a first direction. The drift layer further comprises two stacked layers, each stacked layer with alternating regions of n-type and p-type semiconductor material. Each stacked drift layer portion has a different concentration of n-type and p-type dopants. The stacked drift layer portions also have different thicknesses, such that the interface between the stacked drift layer portions is closer to the buffer layer than base layer. In addition, the regions of n-type and p-type semiconductor material of the drift layer may have the same width in the first direction. |
