METHODS OF MAKING WORD LINES AND SELECT LINES IN NAND FLASH MEMORY

摘要

A NAND flash memory chip includes word lines (526a...h) formed by etching through concentric conductive loops and, in the same etch step, etching through a conductive strip to form select lines (524a, b). A conductive loop forms two word lines (e.g. 526a, e) which are in different erase blocks and are separately controlled by peripheral circuits.