发明名称 THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor substrate and a manufacturing method of the thin film transistor substrate.SOLUTION: A thin film transistor substrate disclosed includes: a base substrate; an active pattern which is disposed on the base substrate and includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode and including an oxide semiconductor; a gate insulation pattern disposed on the active pattern; a gate electrode which is disposed on the gate insulation pattern and overlaps with the channel; and light shielding pattern disposed between the base substrate and the active pattern.
申请公布号 JP2014053590(A) 申请公布日期 2014.03.20
申请号 JP20130105880 申请日期 2013.05.20
申请人 SAMSUNG DISPLAY CO LTD 发明人 LEE MIN JUNG;KHANG YOON-HO;YU SE-HWAN;YI YONG SU;SHIM JIN-YOUNG;LEE JI-SEON;CHOI KWANG-YOUNG
分类号 H01L21/336;G02F1/1368;H01L21/28;H01L29/786 主分类号 H01L21/336
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