发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate and a manufacturing method of the thin film transistor substrate.SOLUTION: A thin film transistor substrate disclosed includes: a base substrate; an active pattern which is disposed on the base substrate and includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode and including an oxide semiconductor; a gate insulation pattern disposed on the active pattern; a gate electrode which is disposed on the gate insulation pattern and overlaps with the channel; and light shielding pattern disposed between the base substrate and the active pattern. |
申请公布号 |
JP2014053590(A) |
申请公布日期 |
2014.03.20 |
申请号 |
JP20130105880 |
申请日期 |
2013.05.20 |
申请人 |
SAMSUNG DISPLAY CO LTD |
发明人 |
LEE MIN JUNG;KHANG YOON-HO;YU SE-HWAN;YI YONG SU;SHIM JIN-YOUNG;LEE JI-SEON;CHOI KWANG-YOUNG |
分类号 |
H01L21/336;G02F1/1368;H01L21/28;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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