发明名称 POST PACKAGE REPAIRING METHOD, METHOD OF PREVENTING MULTIPLE ACTIVATION OF SPARE WORD LINES, AND SEMICONDUCTOR MEMORY DEVICE INCLUDING FUSE PROGRAMMING CIRCUIT
摘要 Provided is a method of preventing simultaneous activation of redundancy memory line or spare word lines, the method including: programming a fail address of a memory line determined to be defective; reprogramming the fail address if a first spare line for the memory line is determined to be defective; storing additional information with respect to the reprogrammed fail address; and activating a second spare line and inactivating the first spare line, referring to the additional information.
申请公布号 US2014078842(A1) 申请公布日期 2014.03.20
申请号 US201314030066 申请日期 2013.09.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH JONG-MIN;LEE YUN-YOUNG;SONG HOYOUNG;KIM CHIWOOK;SOHN DONGHYUN
分类号 G11C29/04 主分类号 G11C29/04
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