RESISTANCE MEMORY CELL, RESISTANCE MEMORY ARRAY AND METHOD OF FORMING THE SAME

摘要

A resistance memory cell including a variable resistance layer is provided. The variable resistance layer includes at least one dominant resistance layer and at least one auxiliary resistance layer. The dominant resistance layer(s) and the auxiliary resistance layer(s) in totality form a closed ion exchange system, the exchanged ions are comparably mobile in each of the dominant resistance layer(s) and the auxiliary resistance layer(s), and the maximum resistance of the at least one dominant resistance layer is higher than that of the at least one auxiliary resistance layer.