发明名称 |
FABRICATING A SEMICONDUCTOR DIE HAVING COEFFICIENT OF THERMAL EXPANSION GRADED LAYER |
摘要 |
A method of fabricating a semiconductor die includes circuit elements configured to provide a circuit function. A substrate including a bottomside and a topside is provided. At least one multi-layer structure is formed. The forming is done by depositing a coefficient of thermal expansion (CTE) graded layer comprising at least a dielectric portion on a first material having a first CTE to provide a first side facing said first material and a second side opposite the first side. The depositing includes flowing a first reactive component and at least a second reactive component. A gas flow ratio of the first reactive component relative to the second reactive component is automatically changed during a deposition time to provide a non-constant composition profile which has a graded CTE that increases from the first side to the second side. A metal layer comprising a second material having a second CTE is formed on the second side. The second CTE is higher than the first CTE. |
申请公布号 |
US2014080301(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201314089958 |
申请日期 |
2013.11.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KIRKPATRICK BRIAN K.;TIWARI RAJESH |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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