| 摘要 |
PROBLEM TO BE SOLVED: To provide a bidirectional thyristor for reducing current density applied in initial conduction of a main thyristor, and improving a communication critical voltage increase rate (dv/dt) c. SOLUTION: The bidirectional thyristor 1 includes a configuration in which planar shapes of a first connection portion 31 between a gate electrode (G) 23 and a second semiconductor region (base region) 12 connected thereto, and a sixth semiconductor region (gate region) 16 are constituted of a ring shape, and planar shapes of a first main electrode (T1) 21, a second connection portion 32 connected to the main electrode and a fourth semiconductor region (surface emitter region) 14 which are spaced with a predetermined distance are formed of a ring shape. Similarly, the planar shape of a fifth semiconductor region (rear surface emitter region) 15 is constituted of a ring shape. Further, a main thyristor of one recerse parallel connection is disposed on the inside from the gate electrode 23. COPYRIGHT: (C)2009,JPO&INPIT |
