| 摘要 |
Each of first and second material substrates (11, 12) made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion (30). The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion (70) for closing the gap over the opening is formed. A connecting portion (BDa) for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion (70). The closing portion (BDa) is removed. A silicon carbide single crystal is grown on the first and second front surfaces. |
