| 摘要 |
A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device, a second semiconductor device, and a first insulating layer covering the first semiconductor device and the second semiconductor device formed thereon, performing an etching process to remove a portion of the first insulating layer to expose a portion of the first semiconductor device and the second semiconductor device, forming a second insulating layer covering the first semiconductor device and the second semiconductor device, performing a first planarization process to remove a portion of the second insulating layer, forming a first gate trench and a second gate trench respectively in the first semiconductor device and the second semiconductor device, and forming a first metal gate and a second metal gate respectively in the first gate trench and the second gate trench. |
