发明名称 |
Method of forming gate dielectric layer and method of fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process. |
申请公布号 |
US8673754(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US201213494288 |
申请日期 |
2012.06.12 |
申请人 |
LEE SEUNG-MI;JI YUN HYUCK;KIM BEOM-YONG;JEON BONG-SEOK;SK HYNIX INC. |
发明人 |
LEE SEUNG-MI;JI YUN HYUCK;KIM BEOM-YONG;JEON BONG-SEOK |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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