发明名称 |
Gallium-nitride-on-diamond wafers and devices, and methods of manufacture |
摘要 |
Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications. |
申请公布号 |
US8674405(B1) |
申请公布日期 |
2014.03.18 |
申请号 |
US201213407588 |
申请日期 |
2012.02.28 |
申请人 |
BABIC DUBRAVKO;FAILI FIROOZ;FRANCIS DANIEL;DIDUCK QUENTIN;EJECKAM FELIX;ELEMENT SIX TECHNOLOGIES US CORPORATION |
发明人 |
BABIC DUBRAVKO;FAILI FIROOZ;FRANCIS DANIEL;DIDUCK QUENTIN;EJECKAM FELIX |
分类号 |
H01L29/20;H01L23/532 |
主分类号 |
H01L29/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|