发明名称 Methods for substrate surface planarization during magnetic patterning by plasma immersion ion implantation
摘要 A method and apparatus for planarizing magnetically susceptible layers of substrates is provided. A patterned resist is formed on the magnetically susceptible layer, and the substrate is subjected to a plasma immersion ion implantation process to change a magnetic property of the magnetically susceptible layer according to the pattern of the resist material. The substrate is subjected to a plasma material removal process either before or after the implantation process to planarize the surface of the magnetically susceptible layer resulting from the implantation process. The plasma material removal process may be directional or non-directional.
申请公布号 US8673162(B2) 申请公布日期 2014.03.18
申请号 US20100965318 申请日期 2010.12.10
申请人 GOUK ROMAN;VERHAVERBEKE STEVEN;SCOTNEY-CASTLE MATTHEW D.;HILKENE MARTIN A.;APPLIED MATERIALS, INC. 发明人 GOUK ROMAN;VERHAVERBEKE STEVEN;SCOTNEY-CASTLE MATTHEW D.;HILKENE MARTIN A.
分类号 B44C1/22;B32B9/00;H01L21/00 主分类号 B44C1/22
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