| 摘要 |
The present invention relates to an LWR improving process solution of a photoresist pattern, more specifically the LWR improving process solution of the photoresist pattern which contains 0.001-3 wt% of alcohol with 1-8 carbons, 0.0001-1 wt% of surfactant, 0.0001-1 wt% of alkaline material, and 95-99.9997 wt% of water for preventing the crumble of a pattern and improving the LWR of the photoresist pattern. [Reference numerals] (AA) Comparative test example;(BB) Test example 1 |
