发明名称 |
Mechanisms for forming stressor regions in a semiconductor device |
摘要 |
The embodiments of processes and structures described above provide mechanisms for improving mobility of carriers. The dislocations in the source and drain regions and the strain created by the doped epitaxial materials next to the channel region of a transistor both contribute to the strain in the channel region. As a result, the device performance is improved. |
申请公布号 |
US8674453(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US201113324331 |
申请日期 |
2011.12.13 |
申请人 |
TSAI CHUN HSIUNG;WANG TSAN-CHUN;LIU SU-HAO;KWOK TSZ-MEI;WU CHII-MENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI CHUN HSIUNG;WANG TSAN-CHUN;LIU SU-HAO;KWOK TSZ-MEI;WU CHII-MENG |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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