发明名称 |
Method for forming a transistor with recessed drain and source areas and non-conformal metal silicide regions |
摘要 |
A non-conformal metal silicide in a transistor of recessed drain and source configuration may provide enhanced efficiency with respect to strain-inducing mechanisms, drain/source resistance and the like. For this purpose, in some cases, an amorphizing implantation process may be performed prior to the silicidation process, while in other cases an anisotropic deposition of the refractory metal may be used. |
申请公布号 |
US8673713(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US201113080003 |
申请日期 |
2011.04.05 |
申请人 |
HOENTSCHEL JAN;GRIEBENOW UWE;WEI ANDY;ADVANCED MICRO DEVICES, INC. |
发明人 |
HOENTSCHEL JAN;GRIEBENOW UWE;WEI ANDY |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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