| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of cleaning an oxide film of metal in a plasma processing apparatus, and to provide a plasma processing apparatus.SOLUTION: A plasma processing apparatus 10 comprises: a processing container 12; a mounting table 14; a remote plasma unit 16; a diffusion part 18; and an ion filter 20. The mounting table 14 is provided in the processing container. The remote plasma unit 16 supplies gas containing excited hydrogen to the diffusion part 18 through an exit, and diffuses the active species of hydrogen. The ion filter 20 is interposed between the diffusion part 18 and the mounting table 14, while spaced apart from the diffusion part 18. The ion filter 20 captures hydrogen ions, contained in the active species of hydrogen diffused by the diffusion part 18, and passes the active species of hydrogen where the amount of hydrogen ions is reduced furthermore. |
