| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of the read operation.SOLUTION: If a first bit line and a first source line are electrically connected to a memory cell MTr to be read in a read operation, a nonvolatile semiconductor memory device according to an embodiment precharges the first source line to a first voltage and simultaneously precharges the first bit line to the first voltage. When the first bit line is precharged to the first voltage, a first transistor and second transistor on a first current path and a third transistor on a second current path are turned on, thereby equalizing the potential of the first bit line and the potential of the first source line. A voltage that is applied to a gate of the first transistor is higher than a voltage that is applied to a gate of the second transistor. |
