发明名称 |
POWER SEMICONDUCTOR MODULE |
摘要 |
PROBLEM TO BE SOLVED: To reduce the wiring inductance of a power semiconductor module.SOLUTION: A power semiconductor module comprises: a first power semiconductor element; a second power semiconductor element; a first conductor portion facing the first power semiconductor element; a second conductor portion facing the first conductor portion with the first power semiconductor element interposed therebetween; a third conductor portion facing the second power semiconductor element; a fourth conductor portion facing the third conductor portion with the second power semiconductor element interposed therebetween; a first intermediate conductor portion extending from the first conductor portion; a second intermediate conductor portion extending from the fourth conductor portion; a positive-electrode-side first terminal and a positive-electrode-side second terminal protruding from the first intermediate conductor portion; and a negative-electrode-side first terminal and a negative-electrode-side second terminal protruding from the second intermediate conductor portion. The negative-electrode-side first terminal is disposed adjacent to the positive-electrode-side first terminal, and the negative-electrode-side second terminal is disposed adjacent to the positive-electrode-side second terminal. |
申请公布号 |
JP2014050206(A) |
申请公布日期 |
2014.03.17 |
申请号 |
JP20120190810 |
申请日期 |
2012.08.31 |
申请人 |
HITACHI AUTOMOTIVE SYSTEMS LTD |
发明人 |
TOKUYAMA TAKESHI;NAKATSU KINYA;MIMA AKIRA;HATTORI YUKIO;SATO TOSHIYA |
分类号 |
H02M7/48;H01L25/07;H01L25/18 |
主分类号 |
H02M7/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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