| 摘要 |
<p>Disclosed are a transparent non-volatile memory and a method of manufacturing the same. The method of manufacturing the same includes a step of forming an active layer on a substrate; a step of forming a source and a drain which are separated from each other on the active layer; a step of forming a gate insulating layer having quantum dots on the source, the drain, and the active layer; and a step of forming a gate on the gate insulating layer between the source and the drain. The quantum dots and the gate insulating layer can be formed simultaneously.</p> |
