| 摘要 |
Provided are methods and related apparatus for removing tungsten film from a station of a single-station or multi-station chamber and station component surfaces between tungsten deposition processes. In some embodiments, the methods can involve introducing an inert gas flow upstream of a gas inlet to a station and downstream of a remote plasma generator that provides activated cleaning species. In some embodiments, the methods can involve modulating inert gas flow during various stages of a cleaning process. In some embodiments, the methods can involve manipulating positions of a substrate carrier ring during various stages of the cleaning process. Also in some embodiments, the methods can involve differentially modulating the amounts of inert gas introduced to stations of a multi-station chamber. The methods can provide improved clean uniformity, reduced over-etch, and increased throughput due to shorter cleaning time. |
