发明名称 METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a good-quality light emitting device by a manufacturing method of inspecting and repairing a defect portion of a light emitting element having an anode, a cathode, and an organic compound layer.SOLUTION: A bias voltage is applied to a light emitting element having a defect portion to detect the defect portion. Such the defect portion can be measured by an emission microscope. The detected defect portion is irradiated with a laser to physically separate a short-circuit point of the defect portion, and thereby, the defect portion is repaired. An insulating film can be formed in the defect portion after the laser irradiation. Also a method of manufacturing such the light emitting device. is provided.
申请公布号 JP2014044959(A) 申请公布日期 2014.03.13
申请号 JP20130227831 申请日期 2013.11.01
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAGATA HIROKAZU;ADACHI YOSHIMI;SHIBATA NORIKO
分类号 H05B33/10;H01L51/50;H01L51/52 主分类号 H05B33/10
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