发明名称 |
METHOD OF MANUFACTURING LIGHT EMITTING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a good-quality light emitting device by a manufacturing method of inspecting and repairing a defect portion of a light emitting element having an anode, a cathode, and an organic compound layer.SOLUTION: A bias voltage is applied to a light emitting element having a defect portion to detect the defect portion. Such the defect portion can be measured by an emission microscope. The detected defect portion is irradiated with a laser to physically separate a short-circuit point of the defect portion, and thereby, the defect portion is repaired. An insulating film can be formed in the defect portion after the laser irradiation. Also a method of manufacturing such the light emitting device. is provided. |
申请公布号 |
JP2014044959(A) |
申请公布日期 |
2014.03.13 |
申请号 |
JP20130227831 |
申请日期 |
2013.11.01 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAGATA HIROKAZU;ADACHI YOSHIMI;SHIBATA NORIKO |
分类号 |
H05B33/10;H01L51/50;H01L51/52 |
主分类号 |
H05B33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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